BASED ON MATHEMATICAL FORMALIZATION OF PROCEDURES FOR THE DESIGN OF MOSFETS-Reference-Cited by-同舟云学术

BASED ON MATHEMATICAL FORMALIZATION OF PROCEDURES FOR THE DESIGN OF MOSFETS

Published:2018-07-24 Issue:1 Volume:11 Page:31-38
ISSN:2219-0767
Container-title:Modeling of systems and processes
language:en
Short-container-title:

Author:

Лавлинский В.¹,Lavlinskiy V.²,Савченко Андрей³,Savchenko Andrey⁴,Кулай А.⁵,Kulay A.⁶

Affiliation:

1. Воронежский государственный лесотехнический университет имени Г.Ф. Морозова

2. Voronezh State University of Forestry and Technologies named after G.F. Morozov

3. ОАО «Научно-исследовательский институт микроэлектронной аппаратуры «Прогресс»

4. OAO «Nauchno-issledovatel'skiy institut mikroelektronnoy apparatury «Progress»

5. АО «Научно-исследовательский институт электронной техники»

6. AO «Nauchno-issledovatel'skiy institut elektronnoy tehniki»

Publisher

Infra-M Academic Publishing House

Subject

General Medicine

Reference12 articles.

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2. Simulation of total dose influence on analog-digital SOI/SOS CMOS circuits with EKV-RAD macromodel / K. O. Petrosyants, I. A. Kharitonov, L. M. Sambursky, V. N. Bogatyrev, Z. M. Povarnitcyna, E. S. Drozdenko // В сборнике: Proceedings of IEEE East-West Design and Test Symposium, EWDTS. – 2013. – С. 667., Simulation of total dose influence on analog-digital SOI/SOS CMOS circuits with EKV-RAD macromodel / K. O. Petrosyants, I. A. Kharitonov, L. M. Sambursky, V. N. Bogatyrev, Z. M. Povarnitcyna, E. S. Drozdenko // V sbornike: Proceedings of IEEE East-West Design and Test Symposium, EWDTS. – 2013. – S. 667.

3. Christian, C. Charge-based MOS Transistor Modeling The EKV model for low-power and RF IC design / Christian C. Enz Eric A. Vittoz // John Wiley & Sons, Ltd. – P. 328., Christian, C. Charge-based MOS Transistor Modeling The EKV model for low-power and RF IC design / Christian C. Enz Eric A. Vittoz // John Wiley & Sons, Ltd. – P. 328.

4. The EPFL-EKV MOSFET model equations for simulation. – Режим доступа: http://files.lib.sfu-kras.ru/ebibl/umkd/48/Accesories/Orcad%209%20DEMO/Document/ekv26.pdf. – Загл. с экрана., The EPFL-EKV MOSFET model equations for simulation. – Rezhim dostupa: http://files.lib.sfu-kras.ru/ebibl/umkd/48/Accesories/Orcad%209%20DEMO/Document/ekv26.pdf. – Zagl. s ekrana.

5. Лавлинский, В. В. Теоретические основы моделирования компонентов для систем автоматизации проектирования электронной базы на основе синтеза виртуальной реальности / В. В. Лавлинский // Моделирование систем и процессов. – 2013. – № 3. – С. 16-20., Lavlinskiy, V. V. Teoreticheskie osnovy modelirovaniya komponentov dlya sistem avtomatizacii proektirovaniya elektronnoy bazy na osnove sinteza virtual'noy real'nosti / V. V. Lavlinskiy // Modelirovanie sistem i processov. – 2013. – № 3. – S. 16-20.

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