P-19: Investigation of Deposition Rate Effects on the Current-Voltage Characteristics of Organic Dynamic Random Access Bistable Devices-Reference-Cited by-同舟云学术

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P-19: Investigation of Deposition Rate Effects on the Current-Voltage Characteristics of Organic Dynamic Random Access Bistable Devices

Published:2007-05 Issue:1 Volume:38 Page:241-244
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:

Author:

Chang Tzu-Yueh,Chen Szu-Yuan,Lee Po-Tsung

Publisher

Wiley

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1889/1.2785274/fullpdf

Reference15 articles.

1. “NORM: A novel localized trapping, 2-bit nonvolatile memory cell”;Eitan;IEEE Electron Device Lett.,2000

2. “Nonvolatile memory element based on a ferroelectric polymer Langmuir-Blodgett film”;Reece;Appl. Phys. Lett,2003

3. “Electrical switching and memory phenomena in Cu-TCNQ thin films”;Potember;Appl. Phys. Lett.,1979

4. “A Catenane-Based Solid State Electronically Reconfigurable Switch”;Collier;Science,2000

5. “Organic bistable light-emitting devices”;Ma;Appl. Phys. Lett.,2002

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