50.2: High Reliable In-Ga-Zn-Oxide FET Based Electronic Global Shutter Sensors for In-Cell Optical Touch Screens and Image Sensors-Reference-Cited by-同舟云学术

50.2: High Reliable In-Ga-Zn-Oxide FET Based Electronic Global Shutter Sensors for In-Cell Optical Touch Screens and Image Sensors

Published:2011-06 Issue:1 Volume:42 Page:729-732
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:

Author:

Tamura Hikaru,Hamada Toshiki,Nakagawa Takashi,Aoki Takeshi,Ikeda Masataka,Kozuma Munehiro,Kurokawa Yoshiyuki,Ikeda Takayuki,Moriya Koji,Hirakata Yoshiharu,Kamata Nozomi,Murakawa Tsutomu,Koyama Jun,Yamazaki Shunpei,Tochibayashi Katsuaki,Okazaki Kenichi,Sakakura Masayuki

Publisher

Wiley

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1889/1.3621430/fullpdf

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3. The phase relations in the In2O3Ga2ZnO4ZnO system at 1350°C

4. Modulated Structures of Homologous Compounds InMO3(ZnO)m(M=In, Ga;m=Integer) Described by Four-Dimensional Superspace Group

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