P-201L: Late-News Poster: Threshold Voltage Shift under Bias Temperature Stress of Amorphous Indium Gallium Zinc Oxide TFTs-Reference-Cited by-同舟云学术

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P-201L: Late-News Poster: Threshold Voltage Shift under Bias Temperature Stress of Amorphous Indium Gallium Zinc Oxide TFTs

Published:2010 Issue:1 Volume:41 Page:1373
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:SID Symposium Digest

Author:

Kim Dae-Hwan,Vim Hoon,Lee Seung-Min,Kim Sung Ki,Park Kwon-Shik,Kim Chang-Dong,Hwang Yong Kee,Chung In-Jae

Publisher

Wiley

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1889/1.3499957/fullpdf

Reference5 articles.

1. Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application

2. Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors

3. Modeling of amorphous InGaZnO thin-film transistors based on the density of states extracted from the optical response of capacitance-voltage characteristics

4. Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors

5. T. C. Fung, K. Abe, H. Kumomi and J. Kanicki, Jounal of Display Technology, Vol. 5, No 12, 452

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 69.2:Distinguished Paper: High Reliable a-IGZO TFTs with Self-Aligned Coplanar Structure for Large-Sized Ultrahigh-Definition OLED TV;SID Symposium Digest of Technical Papers;2015-06

2. 10.2:Invited Paper: Development of Oxide TFT's Structures;SID Symposium Digest of Technical Papers;2013-06

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