P-189L: Late-News Poster: Solution-processed Passivation Layer for a-Si TFTs with High Reliability and Processability for LCD-Reference-Cited by-同舟云学术

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P-189L: Late-News Poster: Solution-processed Passivation Layer for a-Si TFTs with High Reliability and Processability for LCD

Published:2010 Issue:1 Volume:41 Page:1482
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:SID Symposium Digest

Author:

Sugitani Koichi,Tanabe Akihiro,Hanmura Masahiro,Ohmori Hironori,Katoh Takeyoshi,Tada Mitsushi,Suzuki Teruhiko

Publisher

Wiley

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1889/1.3499987/fullpdf

Reference6 articles.

1. Ultrathin silicon nitride gate dielectrics prepared by catalytic chemical vapor deposition at low temperatures

2. Y. Tashiro, “Photosensitive Spin-on-Glass Materials with Phenyl Silsesquioxane (PSQ) Derivatives” IDW'08, FMCp-33.

3. K. Sugitani, “Photo-sensitive Passivation Layer for a-Si TFT of LCD with Characteristics of Low Dielectric Constant” IDW'08, FMCp-43L.

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical stability enhancement of GeInGaO thin-film transistors by solution-processed Li-doped yttrium oxide passivation;Journal of Physics D: Applied Physics;2016-06-15

2. 20.3: The Organic Passivation Layer for Flexible Thin Film Transistors;SID Symposium Digest of Technical Papers;2012-06

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