Optical studies of strain effects in quantum wells grown on (311) and (100) GaAs substrates
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.64.195325/fulltext
Reference17 articles.
1. Valence band engineering in strained-layer structures
2. Spin-orbit-coupling effects on the valence-band structure of strained semiconductor quantum wells
3. Theoretical study of strained thin quantum wells grown on vicinal surfaces
4. Structure of vapor‐deposited GaxIn1−xAs crystals
5. Resonance Raman Scattering by Confined LO and TO Phonons in GaAs-AlAs Superlattices
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1. Optical anisotropy in type-II quantum wells on high-index substrates;Journal of Applied Physics;2014-02-07
2. Analysis of confinement potential fluctuation and band-gap renormalization effects on excitonic transition in GaAs/AlGaAs multiquantum wells grown on (100) and (311)A GaAs surfaces;Physica B: Condensed Matter;2012-06
3. Effects of interface grading on optical anisotropy in type-II quantum wells on high-index substrates;Physica E: Low-dimensional Systems and Nanostructures;2012-04
4. Contrasting LH-HH subband splitting of strained quantum wells grown along [001] and [113] directions;Physical Review B;2010-06-01
5. 6×6effective mass Hamiltonian for heterostructures grown on (11N)-oriented substrates;Physical Review B;2003-08-27
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