Quasi-two-dimensional plasmons of a single δ-doped layer in GaAs studied by high-resolution electron-energy-loss spectroscopy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.47.3819/fulltext
Reference21 articles.
1. Fundamental studies and device application of ?-doping in GaAs Layers and in AlxGa1?xAs/GaAs heterostructures
2. Subband physics for a “realistic” δ-doping layer
3. Secondary‐ion mass spectrometry on δ‐doped GaAs grown by molecular beam epitaxy
4. Migration of Si in molecular‐beam epitaxial growth of δ‐doped GaAs and Al0.25Ga0.75As
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