Spectral ellipsometry investigation ofZn0.53Cd0.47Selattice matched to InP
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.56.4037/fulltext
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4. Dependence of the density and type of stacking faults on the surface treatment of the substrate and growth mode in ZnSxSe1−x/ZnSe buffer layer/GaAs heterostructures
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