Nonlocal pseudopotentials in complex band-structure and photoemission calculations-Reference-Cited by-同舟云学术

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Nonlocal pseudopotentials in complex band-structure and photoemission calculations

Published:1997-02-15 Issue:8 Volume:55 Page:5045-5050
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Bödicker A.,Schattke W.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.55.5045/fulltext

Reference30 articles.

1. Angle-resolved photoemission studies of Ge(111)-c(2×8), Ge(111)-(1×1)H, Si(111)-(7×7), and Si(100)-(2×1)

2. Experimental study of the band structure of GaP, GaAs, GaSb, InP, InAs, and InSb

3. Inverse-photoemission study of unoccupied electronic states in Ge and Si: Bulk energy bands

4. Surface and bulk electronic structure of Ge(111)c(2×8) and Ge(111):As 1×1

5. Electronic structure of the GaSb(001) surface

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1. Topological mass mechanism and exact fields mapping;Journal of Physics A: Mathematical and General;2006-01-11

2. A new picture on the (3+1)D topological mass mechanism;Journal of Physics A: Mathematical and General;2004-11-18

3. THE STUECKELBERG FIELD;International Journal of Modern Physics A;2004-08-10

4. Electronic structure of AgBr(111) twin boundaries;Journal of Physics and Chemistry of Solids;2001-03

5. Valence-band photoemission fromGaAs(100)−c(4×4);Physical Review B;2001-02-01

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