Medium-energy ion-scattering study of a possible relation between the Schottky-barrier height and the defect density atNiSi2/Si(111) interfaces

Author:

Vrijmoeth J.,van der Veen J. F.,Heslinga D. R.,Klapwijk T. M.

Publisher

American Physical Society (APS)

Cited by 34 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

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