Origin of the current oscillations in GaAs-AlGaAs tunnel junctions
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.31.4080/fulltext
Reference12 articles.
1. Sequential Single-Phonon Emission in GaAs-AlxGa1−xAsTunnel Junctions
2. Resonant Fowler–Nordheim tunneling inn−GaAs‐undoped AlxGa1−xAs‐n+GaAs capacitors
3. Drift velocity oscillations in n-GaAs at 77 K
4. Monte Carlo calculations of hot-electron transient behaviour in CdTe and GaAs
5. Theory of transient high-field conductivity in polar semiconductors
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1. Investigation of LO phonon emission by hot holes and the effective mass for hole tunnelling in GaAs/(AlGa)As single barrier structures;Semiconductor Science and Technology;1992-03-01
2. Hot hole effects in single barrierp‐type GaAs/(AlGa)As/GaAs tunnel structures;Applied Physics Letters;1991-12-09
3. Search for quantum size effects in ultrathin epitaxial metallic films;Annales de Physique;1991
4. Fine structure in the energy dependence of current density and oscillations in the current-voltage characteristics of tunnel junctions;Physical Review B;1990-07-15
5. The Investigation of Single and Double Barrier (Resonant Tunnelling) Heterostructures Using High Magnetic Fields;Physics of Quantum Electron Devices;1990
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