Electron-Paramagnetic-Resonance Detection of Optically Induced Divacancy Alignment in Silicon-Reference-Cited by-同舟云学术

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Electron-Paramagnetic-Resonance Detection of Optically Induced Divacancy Alignment in Silicon

Published:1972-05-15 Issue:10 Volume:5 Page:3988-3993
ISSN:0556-2805
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Ammerlaan C. A. J.,Watkins G. D.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.5.3988/fulltext

Reference17 articles.

1. Silicon Divacancy and its Direct Production by Electron Irradiation

2. A new paramagnetic center in electron irradiated silicon

3. Defects in Irradiated Silicon: Electron Paramagnetic Resonance of the Divacancy

4. Production of Divacancies and Vacancies by Electron Irradiation of Silicon

5. Infrared Absorption and Photoconductivity in Irradiated Silicon

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