Dispersive model for the kinetics of light-induced defects ina-Si:H
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.44.10937/fulltext
Reference13 articles.
1. Reversible conductivity changes in discharge‐produced amorphous Si
2. Light‐induced dangling bonds in hydrogenated amorphous silicon
3. Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study
4. Kinetic and steady‐state effects of illumination on defects in hydrogenated amorphous silicon
5. The connection between dispersive hydrogen motion and the kinetics of light-induced defects in hydrogenated amorphous silicon
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1. Study of metastabilities in microcrystalline silicon films by photoconductivity techniques;Thin Solid Films;2006-04
2. Light-induced degradation in a-Si:H and its relation to defect creation;Solar Energy Materials and Solar Cells;2003-07
3. Investigation of Light-Induced Defect Depth Profile in Hydrogenated Amorphous Silicon Films;Japanese Journal of Applied Physics;2002-11-15
4. Hydrogen in Polycrystalline Silicon;Semiconductors and Semimetals;1999
5. Influence of an inhomogeneous spatial distribution of defects on the constant photocurrent method;Journal of Applied Physics;1997-05-15
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