Atomistic investigation of various GaN (0001) phases on the6H−SiC(0001) surface
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.59.12604/fulltext
Reference27 articles.
1. GaN, AlN, and InN: A review
2. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
3. High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates
4. The Polarity of GaN: a Critical Review
5. The dependence of the structure and electronic properties of wurtzite GaN surfaces on the method of preparation
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