Application of numerical exciton-wave-function calculations to the question of band alignment inSi/Si1−xGexquantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.59.13314/fulltext
Reference13 articles.
1. Type I Band Alignment inSi1−xGex/Si(001)Quantum Wells: Photoluminescence under Applied [110] and [100] Uniaxial Stress
2. Type II Band Alignment inSi1−xGex/Si(001)Quantum Wells: The Ubiquitous Type I Luminescence Results from Band Bending
3. Photoluminescence of Tensile Strained, Exactly Strain Compensated, and Compressively StrainedSi1−x−yGexCyLayers on Si
4. Photoluminescence in UHV-CVD-grown Si1−xGex quantum wells on Si(100): band alignment variation with excitation density and applied uniaxial stress
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