Photoluminescence quenching in reverse-biasedAlxGa1−xAs/GaAs quantum-well heterostructures due to carrier tunneling
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.31.7859/fulltext
Reference11 articles.
1. Effect of an electric field on the luminescence of GaAs quantum wells
2. Electric field-induced quenching of luminescence in quantum wells
3. Field Effect of GaAs Photoluminescence in the GaP-GaAs and Ga0.3Al0.7As-GaAs Heterojunctions
4. Effect of Surface Electric Fields on Radiative Recombination in CdS
5. Variational calculations on a quantum well in an electric field
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