Conduction Modulation of Solution‐Processed 2D Materials

Author:

Liu Songwei1,Fan Xiaoyue2,Wen Yingyi1,Liu Pengyu1,Liu Yang13,Pei Jingfang1,Yang Wenchen2,Song Lekai1,Pan Danmei4,Zhang Panpan5,Ma Teng6,Lin Yue4,Wang Gang2,Hu Guohua1ORCID

Affiliation:

1. Department of Electronic Engineering The Chinese University of Hong Kong Shatin New Territories Hong Kong SAR China

2. Centre for Quantum Physics Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE) School of Physics Beijing Institute of Technology Beijing 100081 China

3. Shun Hing Institute of Advanced Engineering The Chinese University of Hong Kong Shatin New Territories Hong Kong SAR China

4. CAS Key Laboratory of Design and Assembly of Functional Nanostructures and State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian 350002 China

5. State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and Telecommunications Beijing 100876 China

6. Department of Applied Physics Hong Kong Polytechnic University Hung Hom Kowloon Hong Kong SAR China

Abstract

AbstractSolution‐processed 2D materials hold promise for their scalable applications. However, the random, fragmented nature of the solution‐processed nanoflakes and the poor percolative conduction through their discrete networks limit the performance of the enabled devices. To overcome the problem, conduction modulation of the solution‐processed 2D materials is reported via Stark effect. Using liquid‐phase exfoliated molybdenum disulfide (MoS2) as an example, nonlinear conduction switching with a ratio of >105 is demonstrated by the local fields from the interfacial ferroelectric P(VDF‐TrFE). Through density‐functional theory calculations and in situ Raman scattering and photoluminescence spectroscopic analysis, the modulation is understood to arise from a charge redistribution in the solution‐processed MoS2. Beyond MoS2, the modulation may be shown effective for the other solution‐processed 2D materials and low‐dimensional materials. The modulation can open their electronic device applications, for instance, thin‐film nonlinear electronics and non‐volatile memories.

Funder

Chinese University of Hong Kong

Shun Hing Institute of Advanced Engineering

Hong Kong Polytechnic University

National Natural Science Foundation of China

Natural Science Foundation of Beijing Municipality

Beijing University of Posts and Telecommunications

Publisher

Wiley

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