Reflectivity studies of the strain dependence onE0andE0+Δ0excitonic transitions in ZnSe/GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.44.8912/fulltext
Reference22 articles.
1. The effect of lattice deformation on optical properties and lattice parameters of ZnSe grown on (100)GaAs
2. Piezo- and photomodulated reflectivity spectra of ZnSe/GaAs and CdTe/InSb epilayers
3. Effect of biaxial strain on exciton luminescence of heteroepitaxial ZnSe layers
4. Excitonic transitions in ZnSe epilayers grown on GaAs
5. Comparative optical investigations of ZnSe/GaAs epilayers grown by molecular beam and hot‐wall epitaxy
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1. Evolution of Kinetically Limited Lattice Relaxation and Threading Dislocations in Temperature-Graded ZnSe/GaAs (001) Metamorphic Heterostructures;Journal of Electronic Materials;2015-03-24
2. Electroreflectance Study of ZnSe in ZnSe/GaAs Heterostructure;Journal of the Korean Vacuum Society;2012-11-30
3. Compressive strain induced heavy hole and light hole splitting of Zn1−xCdxSe epilayers grown by molecular beam epitaxy;Materials Chemistry and Physics;2003-02
4. Thickness dependence of exciton and polariton spectra from ZnSe films grown on GaAs substrates;Journal of Applied Physics;2001-12-15
5. Piezo-optical coefficients of ZnSe and ZnTe above the fundamental gap;Physical Review B;1999-02-15
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