Atomic-scale structure and photoluminescence of InAs quantum dots in GaAs and AlAs-Reference-Cited by-同舟云学术

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Atomic-scale structure and photoluminescence of InAs quantum dots in GaAs and AlAs

Published:2005-10-25 Issue:16 Volume:72 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Offermans P.,Koenraad P. M.,Wolter J. H.,Pierz K.,Roy M.,Maksym P. A.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.72.165332/fulltext

Reference35 articles.

1. Effects of a thin AlAs layer on InAs quantum dot electronic structure

2. Electronic states tuning of InAs self-assembled quantum dots

3. Size determination of InAs quantum dots using magneto-tunnelling experiments

4. Observation of spin splitting in single InAs self-assembled quantum dots in AlAs

5. Kinetically limited quantum dot formation on AlAs(100) surfaces

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1. State of the Art of Continuous and Atomistic Modeling of Electromechanical Properties of Semiconductor Quantum Dots;Nanomaterials;2023-06-07

2. Atomic-scale characterization of single and double layers of InAs and InAlAs Stranski-Krastanov quantum dots;Physical Review Materials;2022-11-30

3. Control of Morphology and Substrate Etching in InAs/InP Droplet Epitaxy Quantum Dots for Single and Entangled Photon Emitters;ACS Applied Nano Materials;2022-05-30

4. Study of Size, Shape, and Etch pit formation in InAs/InP Droplet Epitaxy Quantum Dots;Nanotechnology;2022-05-06

5. Structural and compositional analysis of (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dots;Light: Science & Applications;2021-06-15

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