Experimental determination of the GaAs andGa1−xAlxAs band-gap energy dependence on temperature and aluminum mole fraction in the direct band-gap region-Reference-Cited by-同舟云学术

Experimental determination of the GaAs andGa1−xAlxAs band-gap energy dependence on temperature and aluminum mole fraction in the direct band-gap region

Published:1993-08-15 Issue:7 Volume:48 Page:4398-4404
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

El Allali M.,So/rensen C. B.,Veje E.,Tidemand-Petersson P.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.48.4398/fulltext

Reference41 articles.

1. Direct-energy-gap dependence on Al concentration inAlxGa1−xAs

2. Dependence of the AlxGa1−xAs band edge on alloy composition based on the absolute measurement ofx

3. Photoluminescence of AlxGa1-xAs near the Γ-X crossover

4. Optical determination of the AlxGa1-xAs energy gap variation versus the Al concentration in MBE-grown samples

5. Low-temperature optical absorption inAlxGa1−xAs grown by molecular-beam epitaxy

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