Theoretical study of the effect of nonlinear piezoelectricity on the pressure coefficient of the light emission in (111)-orientedInGaAs∕GaAsquantum wells-Reference-Cited by-同舟云学术

Theoretical study of the effect of nonlinear piezoelectricity on the pressure coefficient of the light emission in (111)-orientedInGaAs∕GaAsquantum wells

Published:2008-04-28 Issue:15 Volume:77 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Łepkowski S. P.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.77.155327/fulltext

Reference36 articles.

1. Theory of the anomalously low band-gap pressure coefficients in strained-layer semiconductor alloys

2. Photoluminescence of (111)InxGa1−xAs/GaAsstrained-layer quantum wells under hydrostatic pressure

3. Effective elastic stiffnesses of InAs under uniform strain

4. Photoluminescence from self-assembled long-wavelength InAs/GaAs quantum dots under pressure

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