Photoluminescence from self-assembled long-wavelength InAs/GaAs quantum dots under pressure
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1635988
Reference33 articles.
1. Influence of InxGa1-xAs (0≤x≤0.3) Cap Layer on Structural and Optical Properties of Self-assembled InAs/GaAs Quantum Dots
2. Structural and optical properties of self-assembled InAs/GaAs quantum dots covered by InxGa1−xAs (0⩽x⩽0.3)
3. 1.35μm photoluminescence from In0.5Ga0.5As/GaAs islands grown by molecular beam epitaxy via cycled (InAs)1/(GaAs)1 monolayer deposition
4. Effect of InxGa1−xAs (0⩽x⩽0.4) capping layer on self-assembled 1.3μm wavelength InAs/GaAs quantum islands
5. Energy levels in self-assembled InAs/GaAs quantum dots above the pressure-inducedΓ−Xcrossover
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