Multisubband electron transport in δ-doped semiconductor systems
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.52.8363/fulltext
Reference33 articles.
1. Side-by-side existence of the quantum Hall effect and the magnetic-field-induced metal-insulator transition
2. Experimental and theoretical mobility of electrons in δ‐doped GaAs
3. Electron-mobility enhancement and electron-concentration enhancement in δ-doped n-GaAs at T=300K
4. Subband dependent mobilities and carrier saturation mechanisms in thin Si doping layers in GaAs in the high density limit
5. Observation of high mobility and cyclotron resonance in 20 Å silicon delta-doped GaAs grown by MBE at 480 °C
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