Subband dependent mobilities and carrier saturation mechanisms in thin Si doping layers in GaAs in the high density limit-Reference-Cited by-同舟云学术

Subband dependent mobilities and carrier saturation mechanisms in thin Si doping layers in GaAs in the high density limit

Published:1991-06-01 Issue:6 Volume:6 Page:535-546
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Skuras E,Kumar R,Williams R L,Strading R A,Dmochowski J E,Johnson E A,Mackinnon A,Harris J J,Beall R B,Skierbeszewski C,Singleton J,Wel P J van der,Wisniewski P

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/6/i=6/a=023/pdf

Reference21 articles.

1. Saturation of the free-electron concentration in delta -doped GaAs: the DX centre in two dimensions

2. Investigation of theDXcenter in heavily dopedn-GaAs

3. Evidence against the negative-charge-state model for theDXcenter inn-type GaAs

4. Pressure dependence ofDXcenter mobility in highly doped GaAs

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