Thermionic emission acrossAlxGa1−xAs single barriers under hydrostatic pressure
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.44.3168/fulltext
Reference20 articles.
1. Perpendicular transport across (Al,Ga)As and the Γ to X transition
2. Current–voltage characteristics through GaAs/AlGaAs/GaAs heterobarriers grown by metalorganic chemical vapor deposition
3. High-pressure studies of resonant tunnelling in a graded parameter superlattice and in double barrier structures of GaAs/AlAs
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1. Hydrostatic pressure investigations of resonant tunnelling through X-minimum-related states in a single barrier GaAs/AlAs/GaAs heterostructure;High Pressure Research;2000-09
2. Controlled mechanical AFM machining of two-dimensional electron systems: fabrication of a single-electron transistor;Physica E: Low-dimensional Systems and Nanostructures;2000-02
3. Fabrication of a single-electron transistor by current-controlled local oxidation of a two-dimensional electron system;Applied Physics Letters;2000-01-24
4. Tunneling under Pressure: High-Pressure Studies of Vertical Transport in Semiconductor Heterostructures;High Pressure in Semiconductor Physics II;1998
5. Indented barrier resonant tunneling rectifiers;Journal of Applied Physics;1996-10
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