Nucleation of Ge quantum dots on the Si(001) surface
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.82.045315/fulltext
Reference23 articles.
1. Self-assembly of germanium islands under pulsed irradiation by a low-energy ion beam during heteroepitaxy of Ge/Si(100) structures
2. Classification of Ge hut clusters in arrays formed by molecular beam epitaxy at low temperatures on the Si(001) surface
3. Properties and applications of SiGe nanodots
4. Ge/Si Self-Assembled Quantum Dots and Their Optoelectronic Device Applications
5. Silicon-germanium nanostructures with quantum dots: Formation mechanisms and electrical properties
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3. The formation of intermediate layers in covered Ge/Si heterostructures with low-temperature quantum dots: a study using high-resolution transmission electron microscopy and Raman spectroscopy;Semiconductor Science and Technology;2020-03-05
4. Structural properties of templated Ge quantum dot arrays: impact of growth and pre-pattern parameters;Nanotechnology;2018-05-08
5. Different growth mechanisms of Ge by Stranski-Krastanow on Si (111) and (001) surfaces: An STM study;Applied Surface Science;2017-01
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