Optical dephasing and excitation transfer of an impurity-bound exciton in a semiconductor: Photon-echo experiments on GaP:N
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.32.8108/fulltext
Reference40 articles.
1. Isoelectronic Traps Due to Nitrogen in Gallium Phosphide
2. Nitrogen concentration in GaP measured by optical absorption and by proton‐induced nuclear reactions
3. Zeeman Effect of Bound Excitons in Gallium Phosphide
4. Stress dependence of the nitrogen-bound excitons in GaP: N
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