Stress dependence of the nitrogen-bound excitons in GaP: N
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.22.4834/fulltext
Reference37 articles.
1. Excitonic Molecule Bound to the Isoelectronic Nitrogen Trap in GaP
2. Recombination processes associated with “Deep states” in gallium phosphide
3. Temperature Dependence of the Optical Absorption of Bound Excitons in GaP:N and GaP:S Crystals
4. Optical investigations of the undulation spectrum of GaP:N:Zn
5. Excited states of excitons bound to nitrogen pairs in GaP
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1. Bound exciton luminescence in shock compressed GaP:S and GaP:N;Journal of Applied Physics;2009-07-15
2. Indirect band-gap transitions in GaP shocked along the [100], [110], and [111] axes;Physical Review B;2007-06-29
3. Systematic approach to distinguishing a perturbed host state from an impurity state in a supercell calculation for a doped semiconductor: Using GaP:N as an example;Physical Review B;2006-07-21
4. Confirmation of the impurity-band model forGaP1−xNx;Physical Review B;2005-08-08
5. Behavior of nitrogen impurities in III–V semiconductors;Journal of Luminescence;2000-01
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