Indirect band-gap transitions in GaP shocked along the [100], [110], and [111] axes-Reference-Cited by-同舟云学术

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Indirect band-gap transitions in GaP shocked along the [100], [110], and [111] axes

Published:2007-06-29 Issue:23 Volume:75 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Grivickas P.,McCluskey M. D.,Gupta Y. M.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.75.235207/fulltext

Reference28 articles.

1. Deformation potentials of the direct and indirect absorption edges of GaP

2. Indirect exciton fine structure in GaP and the effect of uniaxial stress

3. Effect of uniaxial stress on the excitation spectrum of Si and S donors in GaP

4. Stress dependence of the sulfur-bound excitons in GaP

5. Effect of Uniaxial Stress on Excitons Bound to Bismuth in GaP

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1. Systematic strain-induced bandgap tuning in binary III–V semiconductors from density functional theory;Physica Scripta;2023-05-23

2. Shock physics at the nanoscale [Invited];Journal of the Optical Society of America B;2018-08-08

3. Shock-recovery studies on InSb single crystals up to 24 GPa;Journal of Physics: Conference Series;2014-05-07

4. Use of dynamic compression to probe semiconductor response at large strains;physica status solidi (b);2013-04

5. Modeling of carrier lifetimes in uniaxially strained GaAs;Journal of Applied Physics;2012-05-15

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