Electroabsorption inIn0.53Ga0.47As/In0.52Al0.48As asymmetric coupled quantum wells grown on InP substrates
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.40.4183/fulltext
Reference10 articles.
1. Electric field dependence of optical absorption near the band gap of quantum-well structures
2. Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect
3. Electroabsorption by Stark effect on room‐temperature excitons in GaAs/GaAlAs multiple quantum well structures
4. Low-temperature photocurrent studies of electron-state coupling in asymmetric coupled quantum wells
5. Effects of deep levels on the optoelectronic properties of InGaAs/InAlAs multiquantum‐well structures
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1. Theoretical and experimental analysis of Mach–Zehnder quantum‐well modulators;Journal of Applied Physics;1996-07-15
2. Subpicosecond hole tunneling by nonresonant delocalization in asymmetric double quantum wells;Physical Review B;1995-11-15
3. Enhanced electroabsorption in selectively doped (Ga,In)As/(Al,In)As asymmetric double quantum wells;Applied Physics Letters;1995-05-29
4. Molecular‐beam‐epitaxial growth and characterization of high‐quality alloys and multiple quantum wells on InP substrates using a post‐evaporation‐heated arsenic source;Journal of Applied Physics;1994-09-15
5. Significant effect of lateral resistivity on optical nonlinear responses of a quantum wellp‐i‐nphotodiode;Applied Physics Letters;1993-12-13
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