Evidence for identification of the divacancy-oxygen center in Si
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.68.233202/fulltext
Reference9 articles.
1. EPR studies of defects in electron-irradiated silicon: A triplet state of vacancy-oxygen complexes
2. Computational study of interstitial oxygen and vacancy-oxygen complexes in silicon
3. Close to midgap trapping level in 60Co gamma irradiated silicon detectors
4. Formation of a double acceptor center during divacancy annealing in low-doped high-purity oxygenated Si
5. Second-order generation of point defects in gamma-irradiated float-zone silicon, an explanation for “type inversion”
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