Formation of a double acceptor center during divacancy annealing in low-doped high-purity oxygenated Si
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.65.233207/fulltext
Reference19 articles.
1. Defects in Irradiated Silicon: Electron Paramagnetic Resonance of the Divacancy
2. 1.8-, 3.3-, and 3.9-μ Bands in Irradiated Silicon: Correlations with the Divacancy
3. Electron‐irradiation‐induced divacancy in lightly doped silicon
4. Annealing of divacancy-related infrared absorption bands in boron-doped silicon
5. Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implantedn-type silicon
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4. Lifetime Control in Irradiated and Annealed Cz n‐Si: Role of Divacancy‐Oxygen Defects;physica status solidi (a);2019-07-17
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