Direct-band-gap structure of uniaxial-stressedSixGe1−x/Ge [111] strained-layer superlattices
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.45.6628/fulltext
Reference22 articles.
1. Nature of the band discontinuities at semiconductor heterojunction interfaces
2. Core-level photoemission measurements of valence-band offsets in highly strained heterojunctions: Si-Ge system
3. Band alignments of coherently strained GexSi1−x/Si heterostructures on 〈001〉 GeySi1−ysubstrates
4. Theoretical calculations of heterojunction discontinuities in the Si/Ge system
5. GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy
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