First-principles self-energy calculations of carrier-induced band-gap narrowing in silicon
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.45.13741/fulltext
Reference15 articles.
1. Many-Body Effects in a Modulation-Doped Semiconductor Quantum Well
2. Optical absorption in heavily doped silicon
3. Electronic Structure and Spectra of Heavily Dopedn-Type Silicon
4. Energy-gap reduction in heavily doped silicon: Causes and consequences
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