Photoemission study of(V1−xMx)2O3(M=Cr,Ti)-Reference-Cited by-同舟云学术

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Photoemission study of(V1−xMx)2O3(M=Cr,Ti)

Published:2006-10-02 Issue:16 Volume:74 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Mo S.-K.,Kim H.-D.,Denlinger J. D.,Allen J. W.,Park J.-H.,Sekiyama A.,Yamasaki A.,Suga S.,Saitoh Y.,Muro T.,Metcalf P.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.74.165101/fulltext

Reference46 articles.

1. Mott Transition in Cr-DopedV2O3

2. Metal-Insulator Transition in(V1−xCrx)2O3

3. Metal-Insulator Transitions in Pure and DopedV2O3

4. Electrical properties of the(V1−xCrx)2O3system

5. Antiferromagnetism inV2O3

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1. Chemical, structural and electronic properties of ultrathin V2O3 films on Al2O3 substrate: Implications in Mott-like transitions;Applied Surface Science;2023-02

2. Visible and Infrared Photoresponse in (V _0.99 Cr _0.01 ) ₂ O ₃ Epitaxial Films;physica status solidi (a);2022-11-03

3. A review of Mott insulator in memristors: The materials, characteristics, applications for future computing systems and neuromorphic computing;Nano Research;2022-08-23

4. Imaging the itinerant-to-localized transmutation of electrons across the metal-to-insulator transition in V 2 O 3;Science Advances;2021-11-05

5. Role of Surface Termination in the Metal–Insulator Transition of V2O3(0001) Ultrathin Films;ACS Applied Materials & Interfaces;2021-04-22

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