Imaging the itinerant-to-localized transmutation of electrons across the metal-to-insulator transition in V 2 O 3

Author:

Thees Maximilian1ORCID,Lee Min-Han2ORCID,Bouwmeester Rosa Luca3ORCID,Rezende-Gonçalves Pedro H.14ORCID,David Emma1ORCID,Zimmers Alexandre5ORCID,Fortuna Franck1ORCID,Frantzeskakis Emmanouil1ORCID,Vargas Nicolas M.2ORCID,Kalcheim Yoav2ORCID,Le Fèvre Patrick6ORCID,Horiba Koji7ORCID,Kumigashira Hiroshi78ORCID,Biermann Silke91011,Trastoy Juan12ORCID,Rozenberg Marcelo J.13ORCID,Schuller Ivan K.2ORCID,Santander-Syro Andrés F.1ORCID

Affiliation:

1. Université Paris-Saclay, CNRS, Institut des Sciences Moléculaires d'Orsay, 91405 Orsay, France.

2. Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, CA 92093, USA.

3. Faculty of Science and Technology and MESA+ Institute for Nanotechnology, University of Twente, 7500 AE Enschede, Netherlands.

4. Departamento de Física, Universidade Federal de Minas Gerais, Av. Pres. Antonio Carlos, 6627 Belo Horizonte, Brazil.

5. LPEM, ESPCI Paris, PSL Research University, CNRS, Sorbonne Université, 75005 Paris, France.

6. Synchrotron SOLEIL, L'Orme des Merisiers, Saint-Aubin-BP48, 91192 Gif-sur-Yvette, France.

7. Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba 305-0801, Japan.

8. Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, Sendai 980-8577, Japan.

9. CPHT, CNRS, Ecole Polytechnique, Institut Polytechnique de Paris, F-91128 Palaiseau, France.

10. Collège de France, 11 place Marcelin Berthelot, 75005 Paris, France.

11. Department of Physics, Division of Mathematical Physics, Lund University, Professorsgatan 1, 22363 Lund, Sweden.

12. Unité Mixte de Physique, CNRS, Thales, Université Paris-Sud, Université Paris-Saclay, 91767 Palaiseau, France.

13. Université Paris-Saclay, CNRS, Laboratoire de Physique des Solides, 91405 Orsay, France.

Abstract

This work shows how itinerant electrons localize due to increased interactions across the Mott metal-insulator transition.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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