Disentangling Structural and Electronic Properties in V<sub>2</sub>O<sub>3</sub> Thin Films: A Genuine Nonsymmetry Breaking Mott Transition-Reference-Cited by-同舟云学术

Disentangling Structural and Electronic Properties in V₂O₃ Thin Films: A Genuine Nonsymmetry Breaking Mott Transition

Published:2022-07-05 Issue:14 Volume:22 Page:5990-5996
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Mazzola Federico¹^ORCID,Chaluvadi Sandeep Kumar¹^ORCID,Polewczyk Vincent¹,Mondal Debashis¹,Fujii Jun¹,Rajak Piu¹,Islam Mahabul¹,Ciancio Regina¹^ORCID,Barba Luisa²,Fabrizio Michele³,Rossi Giorgio¹⁴^ORCID,Orgiani Pasquale¹^ORCID,Vobornik Ivana¹

Affiliation:

1. CNR-IOM, Area Science Park, Strada Statale 14 km 163.5, I-34149 Trieste, Italy

2. Istituto di Cristallografia del CNR, Strada Statale 14 km 163.5, I-34149 Trieste, Italy

3. International School for Advanced Studies (SISSA), Via Bonomea 265, I-34149 Trieste, Italy

4. University of Milano, Via Celoria 16, I-20133 Milano, Italy

Funder

H2020 European Research Council

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.2c02288

Reference38 articles.

1. Crystal Structure of the Low-Temperature Antiferromagnetic Phase ofV2O3

2. Metal-insulator transition and lattice instability of paramagneticV2O3

3. Mott Transition in Cr-DopedV2O3

4. Metal-Insulator Transitions in Pure and DopedV2O3

5. Orbital Occupancy Order inV2O3: Resonant X-Ray Scattering Results

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