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Domain nucleation across the metal-insulator transition of self-strained V2O3 films

Published:2024-03-27 Issue:3 Volume:8 Page:
ISSN:2475-9953
Container-title:Physical Review Materials
language:en
Short-container-title:Phys. Rev. Materials

Author:

Pofelski Alexandre^ORCID,Valencia Sergio^ORCID,Kalcheim Yoav,Salev Pavel^ORCID,Rivera Alberto,Huang Chubin^ORCID,Mawass Mohamad Assaad^ORCID,Kronast Florian,Schuller Ivan K.,Zhu Yimei^ORCID,del Valle Javier^ORCID

Funder

U.S. Department of Energy

Office of Science

Basic Energy Sciences

Ministerio de Ciencia e Innovación

Fundación para el Fomento en Asturias de la Investigación Científica Aplicada y la Tecnología

Federación Española de Enfermedades Raras

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.8.035003/fulltext

Reference48 articles.

1. Temperature-adaptive radiative coating for all-season household thermal regulation

2. A scalable neuristor built with Mott memristors

3. Biological plausibility and stochasticity in scalable VO2 active memristor neurons

4. Giant nonvolatile resistive switching in a Mott oxide and ferroelectric hybrid

5. Reconfigurable perovskite nickelate electronics for artificial intelligence

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