Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering-Reference-Cited by-同舟云学术

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Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering

Published:2009-10-14 Issue:15 Volume:80 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Luisier Mathieu,Klimeck Gerhard

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.80.155430/fulltext

Reference66 articles.

1. Diameter-controlled synthesis of single-crystal silicon nanowires

2. Solid-phase diffusion mechanism for GaAs nanowire growth

3. Growth and transport properties of complementary germanium nanowire field-effect transistors

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