Conduction properties ofa-Si:Hn+-i-n+structures: Analysis taking into account the effects ofn+-ispace-charge regions
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.46.1582/fulltext
Reference11 articles.
1. On the determination of the density of states in inhomogeneous samples from steady‐state space‐charge‐limited currents
2. Space‐charge‐limited currents: Refinements in analysis and applications toa‐Si1−xGex: H alloys
3. DETERMINATION OF MIDGAP DENSITY OF STATES IN a-Si : H USING SPACE-CHARGE-LIMITED CURRENT MEASUREMENTS
4. Space-charge-limited conduction for the determination of the midgap density of states in amorphous silicon: Theory and experiment
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2. A Physical Model with the Effects of Self-Heating and Variable Resistance in Above-Threshold Region for Hydrogenated Amorphous Silicon Thin Film Transistor;Japanese Journal of Applied Physics;2008-06-13
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