Degenerate doping and conduction-band properties of Si studied by synchrotron photoemission of Sb/Si(001)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.40.3469/fulltext
Reference17 articles.
1. Growth and characterization of a delta‐function doping layer in Si
2. The interaction of Sb4 molecular beams with Si(100) surfaces: Modulated-beam mass spectrometry and thermally stimulated desorption studies
3. Evaporative antimony doping of silicon during molecular beam epitaxial growth
4. Sb-induced bulk band transitions in Si(111) and Si(001) observed in synchrotron photoemission studies
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