General Diffusivity-Mobility Relationship for Heavily Doped Semiconductors-Reference-Cited by-同舟云学术

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General Diffusivity-Mobility Relationship for Heavily Doped Semiconductors

Published:2009-04-01 Issue:3-4 Volume:64 Page:257-262
ISSN:1865-7109
Container-title:Zeitschrift für Naturforschung A
language:
Short-container-title:

Author:

Khan Arif¹,Das Atanu²

Affiliation:

1. 1Electrocom Corporation, P.O. Box 60317, Potomac, Maryland 20859-0317, USA

2. 2Department of Physics and Techno Physics, Vidyasagar University, Midnapore 721 102, West Bengal, India / Current address: Department of Electronic Engineering, Chang Gung University, Keei-Shan Tao-Yuan, Taiwan, 333, Republic of China

Abstract

Abstract A relationship between diffusivity and mobility in degenerate semiconductors is presented. The relationship is general enough to be applicable to both non-degenerate and degenerate semiconductors. It is suitable for the investigation of the electrical transport in heavily doped semiconductors

Publisher

Walter de Gruyter GmbH

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy,Mathematical Physics

Link

https://www.degruyter.com/document/doi/10.1515/zna-2009-3-414/pdf

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Diffusivity–mobility relationship for heavily doped semiconductors exhibiting band tails;Physica B: Condensed Matter;2010-02

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