Observation of intersubband transitions to motionally bound states
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.44.10749/fulltext
Reference7 articles.
1. Motionally Dependent Bound States in Semiconductor Quantum Wells
2. Motional binding in InAs with a realistic surface potential
3. Spectroscopy of InAs subbands
4. The nonparabolicity parallel excitation mechanism and doublet peak problem in subband resonance
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1. Near-surface electronic structure on InAs(100) modified with self-assembled monolayers of alkanethiols;Applied Physics Letters;1999-11
2. Effective-Mass Effects in Localized Defects: Kinetic Confinement;Materials Science Forum;1997-01
3. Scaling of decay lengths for surface states in the gaps of one-dimensional semi-infinite superlattices;Zeitschrift f�r Physik B Condensed Matter;1993-12
4. Kinetic confinement of charge carriers in heterostructures and accumulation layers;Semiconductor Science and Technology;1993-01-01
5. Determination of subband spacing in inversion layers onp-type InAs;Physical Review B;1992-05-15
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