Ordering parameter and band-offset determination for orderedGaxIn1−xP/(Al0.66Ga0.34)yIn1−yPquantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.66.035109/fulltext
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1. Improved performance due to suppression of spontaneous emission in tensile-strain semiconductor lasers
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3. Improved reliability of red GaInP vertical-cavity surface-emitting lasers using bias-induced annealing
4. Comparison of experimental and theoretical gain-current relations in GaInP quantum well lasers
5. Band gaps and spin-orbit splitting of ordered and disorderedAlxGa1−xAsandGaAsxSb1−xalloys
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