Alternating donorlike-acceptorlike configurationally bistable defect in irradiated phosphorus-doped silicon
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.38.10116/fulltext
Reference23 articles.
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1. Ultrasound-stimulated increase in the electron diffusion length in p-Si crystals;Physics of the Solid State;2002-07
2. Configurationally metastable defects in irradiated epitaxially grown boron-dopedp-type Si;Physical Review B;2000-12-22
3. Impurity-assisted annealing of point defect complexes in ion- implanted silicon;Physica B: Condensed Matter;1999-12
4. Study of enhanced phosphorus activity in n-type Si80Ge20 as a function of the doping process;Journal of Materials Research;1996-01
5. First-principles study of the phosphorous-vacancy pair in silicon;Computational Materials Science;1993-10
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