Abstract
The electrical activity of phosphorus in Si80Ge20 alloys prepared by two nonconventional doping processes has been investigated over the temperature range 25–1250 °C. Both a solid state (mechanical alloying) and gaseous phase doping processes were found to extend the electrical activity of phosphorus in Si80Ge20 alloys beyond the reported maximum equilibrium value (2.1 × 1020/cm3) to 2.5–2.9 × 1020/cm3 within the temperature range 900 1200 °C. It is likely that this extended electrical activity of phosphorous is associated with a high density of defects. The enhanced electrical activity of phosphorus enabled Si80Ge20 alloys to have 300 to 1000 °C integrated average electrical power factors in the range 30.1–35.7 μW/cm-°C2.
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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