Perpendicular transport of photoexcited electrons and holes in GaAs/AlAs short-period superlattices: Barrier-thickness and temperature dependence
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.40.1096/fulltext
Reference21 articles.
1. Superlattice and Negative Differential Conductivity in Semiconductors
2. Resonant tunneling through double barriers, perpendicular quantum transport phenomena in superlattices, and their device applications
3. Improved Heterointerface and Vertical Transport in GaAs Single Quantum Well Confined by All-Binary GaAs/AlAs Short-Period-Superlattices
4. Vertical transport in GaAs/Ga1-xAlxAs superlattices observed by photoluminescence
5. Dynamics of photoexcited carriers sinking into an enlarged well in a GaAs/AlAs short-period superlattice
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2. Photoluminescence dynamics due to exciton and free carrier transport in GaAs/AlAs superlattices;Physica E: Low-dimensional Systems and Nanostructures;2010-09
3. Investigation of Carrier Recombination Processes in GaAs/AlAs Multiple Quantum Wells Using Piezoelectric Photothermal and Surface Photovoltage Techniques;Japanese Journal of Applied Physics;2009-07-21
4. Effect of the Photoquenching ofEL2 in GaAs Substrate on the Piezoelectric Photothermal and Surface Photovoltage Spectra of a GaAs Single Quantum Well Confined by GaAs/AlAs Short-Period Superlattices;Japanese Journal of Applied Physics;2008-01-18
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