Defects in electron-irradiated Si studied by positron-lifetime spectroscopy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.58.10363/fulltext
Reference43 articles.
1. Positron trapping rates and their temperature dependencies in electron-irradiated silicon
2. Positron Annihilation Study of Defects Created in Silicon Irradiated with Electrons of High Energy
3. Positron trapping at vacancies in electron-irradiated Si at low temperatures
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