Initial generation of hot LO phonons by photoexcited hot carriers in GaAs andAlxGa1−xAs alloys studied by picosecond Raman spectroscopy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.45.13973/fulltext
Reference27 articles.
1. Subpicosecond Time-Resolved Raman Spectroscopy of LO Phonons in GaAs
2. Time-resolved Raman measurements of intersubband relaxation in GaAs quantum wells
3. Subpicosecond time-resolved Raman spectroscopy of LO phonons in GaAs-AlxGa1−xAs multiple-quantum-well structures
4. Time-resolved Raman scattering in GaAs quantum wells
5. Generation of nonequilibrium optical phonons in GaAs and their application in studying intervalley electron-phonon scattering
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1. Electron Velocity Overshoot, Electron Ballistic Transport, and Nonequilibrium Phonon Dynamics in Nanostructure Semiconductors;Ultrafast Phenomena in Semiconductors;2001
2. Electron velocity overshoot and nonequilibrium phonons in a GaAs-basedp-i-nnanostructure studied by transient subpicosecond Raman spectroscopy;Physical Review B;1996-04-15
3. Ultrafast electronic raman spectroscopy in semiconductors;Progress in Crystal Growth and Characterization of Materials;1996-01
4. Subpicosecond hot-hole relaxation in germanium studied by time-resolved inter-valence-band Raman scattering;Physical Review B;1995-10-15
5. Ballistic propagation of interface optical phonons;Physical Review B;1995-04-15
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