Electron velocity overshoot and nonequilibrium phonons in a GaAs-basedp-i-nnanostructure studied by transient subpicosecond Raman spectroscopy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.53.9838/fulltext
Reference29 articles.
1. Transient and steady‐state electron transport properties of GaAs and InP
2. Monte Carlo investigation of the electron-hole-interaction effects on the ultrafast relaxation of hot photoexcited carriers in GaAs
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